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Organic–Inorganic Hybrid Nanomaterials
Article

High-Performance Self-Powered Ultraviolet Photodetector Based on Nano-Porous GaN and CoPc p–n Vertical Heterojunction

by 1,†, 2,3,†, 1, 1, 3,* and 2,*
1
Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
2
Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China
3
Department of Health and Environmental Sciences, Xi’an Jiaotong-Liverpool University, Suzhou 215123, China
*
Authors to whom correspondence should be addressed.
These authors contributed equally to this work.
Nanomaterials 2019, 9(9), 1198; https://doi.org/10.3390/nano9091198
Received: 31 July 2019 / Revised: 21 August 2019 / Accepted: 21 August 2019 / Published: 26 August 2019
Gallium nitride (GaN) is a superior candidate material for fabricating ultraviolet (UV) photodetectors (PDs) by taking advantage of its attractive wide bandgap (3.4 eV) and stable chemical and physical properties. However, the performance of available GaN-based UV PDs (e.g., in terms of detectivity and sensitivity) still require improvement. Fabricating nanoporous GaN (porous-GaN) structures and constructing organic/inorganic hybrids are two effective ways to improve the performance of PDs. In this study, a novel self-powered UV PD was developed by using p-type cobalt phthalocyanine (CoPc) and n-type porous-GaN (CoPc/porous-GaN) to construct a p–n vertical heterojunction via a thermal vapor deposition method. Under 365 nm 0.009 mWcm−2 light illumination, our device showed a photoresponsivity of 588 mA/W, a detectivity of 4.8 × 1012 Jones, and a linear dynamic range of 79.5 dB, which are better than CoPc- and flat-GaN (CoPc/flat-GaN)-based PDs. The high performance was mainly attributed to the built-in electric field (BEF) generated at the interface of the CoPc film and the nanoporous-GaN, as well as the nanoporous structure of GaN, which allows for a higher absorptivity of light. Furthermore, the device showed excellent stability, as its photoelectrical property and on/off switching behavior remained the same, even after 3 months. View Full-Text
Keywords: ultraviolet photodetectors; nano porous-GaN; organic/inorganic hybrids; p–n heterojunction; self-powered ultraviolet photodetectors; nano porous-GaN; organic/inorganic hybrids; p–n heterojunction; self-powered
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MDPI and ACS Style

Xiao, Y.; Liu, L.; Ma, Z.-H.; Meng, B.; Qin, S.-J.; Pan, G.-B. High-Performance Self-Powered Ultraviolet Photodetector Based on Nano-Porous GaN and CoPc p–n Vertical Heterojunction. Nanomaterials 2019, 9, 1198. https://doi.org/10.3390/nano9091198

AMA Style

Xiao Y, Liu L, Ma Z-H, Meng B, Qin S-J, Pan G-B. High-Performance Self-Powered Ultraviolet Photodetector Based on Nano-Porous GaN and CoPc p–n Vertical Heterojunction. Nanomaterials. 2019; 9(9):1198. https://doi.org/10.3390/nano9091198

Chicago/Turabian Style

Xiao, Yan; Liu, Lin; Ma, Zhi-Hao; Meng, Bo; Qin, Su-Jie; Pan, Ge-Bo. 2019. "High-Performance Self-Powered Ultraviolet Photodetector Based on Nano-Porous GaN and CoPc p–n Vertical Heterojunction" Nanomaterials 9, no. 9: 1198. https://doi.org/10.3390/nano9091198

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