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Impact of Graphene Work Function on the Electronic Structures at the Interface between Graphene and Organic Molecules

1
Department of Physics, Hangzhou Normal University, Hangzhou 311121, China
2
Laboratory of Low-dimensional Carbon Materials, Physics Department, Shaoxing University, Shaoxing 312000, China
3
Department of Applied Physics, College of Electronic and Information Engineering, Shandong University of Science and Technology, Qingdao 266590, China
*
Authors to whom correspondence should be addressed.
Nanomaterials 2019, 9(8), 1136; https://doi.org/10.3390/nano9081136
Received: 31 July 2019 / Revised: 5 August 2019 / Accepted: 6 August 2019 / Published: 7 August 2019
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Abstract

The impact of graphene work function (WF) on the electronic structure at the graphene/organic interface has been investigated. WF manipulation of graphene is realized using self-assembled monolayers (SAMs) with different end groups. With this method, the upper surface of the functionalized graphene remains intact, and thus precludes changes of molecular orientation and packing structures of subsequently deposited active materials. The WF of NH2-SAM functionalized graphene is ~3.90 eV. On the other hand, the WF of graphene increases to ~5.38 eV on F-SAM. By tuning the WF of graphene, an upward band bending is found at the ZnPc/graphene interface on F-SAM. At the interface between C60 and NH2-SAM modified graphene, a downward band bending is observed. View Full-Text
Keywords: graphene; self-assembled monolayers; work function; band bending graphene; self-assembled monolayers; work function; band bending
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).

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Wang, H.; Yang, X.; Dou, W.; Wang, P.; Ye, Q.; Yang, X.; Li, B.; Mao, H. Impact of Graphene Work Function on the Electronic Structures at the Interface between Graphene and Organic Molecules. Nanomaterials 2019, 9, 1136.

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