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Open AccessArticle

Tuning the Doping Ratio and Phase Transition Temperature of VO2 Thin Film by Dual-Target Co-Sputtering

1
School of Materials Science and Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China
2
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
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Department of Physics, Shanghai Normal University, Shanghai 200234, China
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Department of Remote Sensing and Photogrammetry, Finnish Geospatial Research Institute, Geodeetinrinne 2, 02431 Kirkkonummi, Finland
5
School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
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College of Material Science and Engineering, Sichuan University, Sichuan 610064, China
*
Authors to whom correspondence should be addressed.
Nanomaterials 2019, 9(6), 834; https://doi.org/10.3390/nano9060834
Received: 6 April 2019 / Revised: 18 May 2019 / Accepted: 20 May 2019 / Published: 1 June 2019
A new simple way for tuning the phase transition temperature (PTT) of VO2 thin films has been proposed to solve the problem of changing the doping ratio by using the dual-target co-sputtering method. A series of samples with W doping ratios of 0%, 0.5%, 1%, 1.5% and 2% have been fabricated by sputtering V films with the power of pure and 2% W-doped V targets from 500 W: 0 W, 500 W: 250 W, 500 W: 500 W, 250 W: 500 W to 0 W: 500 W respectively and then annealed in an oxygen atmosphere to form VO2. The XRD results of both pure and W-doped VO2 samples reveal that VO2 forms and is the main component after annealing. The PTT can be tuned by controlling the sputtering power ratio of the pure and doped targets. It can be tuned easily from 64.3 °C to 36.5 °C by using the pure and 2% W-doped targets for demonstration, with W doping ratios from 0% to 2%. It is also valid for other doping elements and is a promising approach for the large-scale production of sputtering. View Full-Text
Keywords: VO2; thin films; doping; co-sputtering; phase transition VO2; thin films; doping; co-sputtering; phase transition
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MDPI and ACS Style

Chen, X.; Wu, M.; Liu, X.; Wang, D.; Liu, F.; Chen, Y.; Yi, F.; Huang, W.; Wang, S. Tuning the Doping Ratio and Phase Transition Temperature of VO2 Thin Film by Dual-Target Co-Sputtering. Nanomaterials 2019, 9, 834.

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