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Open AccessArticle

DC Self-Field Critical Current in Superconductor/Dirac-Cone Material/Superconductor Junctions

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M. N. Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences, 18, S. Kovalevskoy St., Ekaterinburg 620108, Russia
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NANOTECH Centre, Ural Federal University, 19 Mira St., Ekaterinburg 620002, Russia
Nanomaterials 2019, 9(11), 1554; https://doi.org/10.3390/nano9111554
Received: 25 September 2019 / Revised: 24 October 2019 / Accepted: 29 October 2019 / Published: 1 November 2019
(This article belongs to the Special Issue Superconductivity in Nanoscaled Systems)
Recently, several research groups have reported on anomalous enhancement of the self-field critical currents, Ic(sf,T), at low temperatures in superconductor/Dirac-cone material/superconductor (S/DCM/S) junctions. Some papers attributed the enhancement to the low-energy Andreev bound states arising from winding of the electronic wave function around DCM. In this paper, Ic(sf,T) in S/DCM/S junctions have been analyzed by two approaches: modified Ambegaokar-Baratoff and ballistic Titov-Beenakker models. It is shown that the ballistic model, which is traditionally considered to be a basic model to describe Ic(sf,T) in S/DCM/S junctions, is an inadequate tool to analyze experimental data from these type of junctions, while Ambegaokar-Baratoff model, which is generally considered to be a model for Ic(sf,T) in superconductor/insulator/superconductor junctions, provides good experimental data description. Thus, there is a need to develop a new model for self-field critical currents in S/DCM/S systems. View Full-Text
Keywords: the self-field critical current; induced superconductivity in Dirac-cone materials; single layer graphene; multiple-band superconductivity the self-field critical current; induced superconductivity in Dirac-cone materials; single layer graphene; multiple-band superconductivity
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MDPI and ACS Style

Talantsev, E.F. DC Self-Field Critical Current in Superconductor/Dirac-Cone Material/Superconductor Junctions. Nanomaterials 2019, 9, 1554.

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