Order Article Reprints

Liang F, Zhao D, Jiang D, Liu Z, Zhu J, Chen P, Yang J, Liu S, Xing Y, Zhang L, et al. Carbon-Related Defects as a Source for the Enhancement of Yellow Luminescence of Unintentionally Doped GaN. Nanomaterials. 2018; 8(9):744. https://doi.org/10.3390/nano8090744

Liang, Feng, Degang Zhao, Desheng Jiang, Zongshun Liu, Jianjun Zhu, Ping Chen, Jing Yang, Shuangtao Liu, Yao Xing, Liqun Zhang, and et al. 2018. "Carbon-Related Defects as a Source for the Enhancement of Yellow Luminescence of Unintentionally Doped GaN" Nanomaterials 8, no. 9: 744. https://doi.org/10.3390/nano8090744

Liang, F., Zhao, D., Jiang, D., Liu, Z., Zhu, J., Chen, P., Yang, J., Liu, S., Xing, Y., Zhang, L., Li, M., Zhang, Y., & Du, G. (2018). Carbon-Related Defects as a Source for the Enhancement of Yellow Luminescence of Unintentionally Doped GaN. Nanomaterials, 8(9), 744. https://doi.org/10.3390/nano8090744