Gutiérrez, M.; Lloret, F.; Pham, T.T.; Cañas, J.; Reyes, D.F.; Eon, D.; Pernot, J.; Araújo, D.
Control of the Alumina Microstructure to Reduce Gate Leaks in Diamond MOSFETs. Nanomaterials 2018, 8, 584.
https://doi.org/10.3390/nano8080584
AMA Style
Gutiérrez M, Lloret F, Pham TT, Cañas J, Reyes DF, Eon D, Pernot J, Araújo D.
Control of the Alumina Microstructure to Reduce Gate Leaks in Diamond MOSFETs. Nanomaterials. 2018; 8(8):584.
https://doi.org/10.3390/nano8080584
Chicago/Turabian Style
Gutiérrez, Marina, Fernando Lloret, Toan T. Pham, Jesús Cañas, Daniel F. Reyes, David Eon, Julien Pernot, and Daniel Araújo.
2018. "Control of the Alumina Microstructure to Reduce Gate Leaks in Diamond MOSFETs" Nanomaterials 8, no. 8: 584.
https://doi.org/10.3390/nano8080584
APA Style
Gutiérrez, M., Lloret, F., Pham, T. T., Cañas, J., Reyes, D. F., Eon, D., Pernot, J., & Araújo, D.
(2018). Control of the Alumina Microstructure to Reduce Gate Leaks in Diamond MOSFETs. Nanomaterials, 8(8), 584.
https://doi.org/10.3390/nano8080584