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Open AccessArticle

Femtosecond Laser-Based Modification of PDMS to Electrically Conductive Silicon Carbide

School of Integrated Design Engineering, Keio University, 3-14-1, Hiyoshi, Kohoku-ku, Yokohama 223-8522, Japan
Department of Electronics and Electrical Engineering, Keio University, 3-14-1, Hiryoshi, Kohoku-ku, Yokohama 223-8522, Japan
Institute of Electronics, Bulgarian Academy of Sciences, Tzarigradsko shouse 72, Sofia 1784, Bulgaria
Author to whom correspondence should be addressed.
Nanomaterials 2018, 8(7), 558;
Received: 28 June 2018 / Revised: 18 July 2018 / Accepted: 19 July 2018 / Published: 22 July 2018
(This article belongs to the Special Issue Laser-Based Nano Fabrication and Nano Lithography)
In this paper, we experimentally demonstrate femtosecond laser direct writing of conductive structures on the surface of native polydimethylsiloxane (PDMS). Irradiation of femtosecond laser pulses modified the PDMS to black structures, which exhibit electrical conductivity. Fourier-transform infrared (FTIR) and X-ray diffraction (XRD) results show that the black structures were composed of β-silicon carbide (β-SiC), which can be attributed to the pyrolysis of the PDMS. The electrical conductivity was exhibited in limited laser power and scanning speed conditions. The technique we present enables the spatially selective formation of β-SiC on the surface of native PDMS only by irradiation of femtosecond laser pulses. Furthermore, this technique has the potential to open a novel route to simply fabricate flexible/stretchable MEMS devices with SiC microstructures. View Full-Text
Keywords: femtosecond laser; silicon carbide; polydimethylsiloxane; laser direct writing femtosecond laser; silicon carbide; polydimethylsiloxane; laser direct writing
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MDPI and ACS Style

Nakajima, Y.; Hayashi, S.; Katayama, A.; Nedyalkov, N.; Terakawa, M. Femtosecond Laser-Based Modification of PDMS to Electrically Conductive Silicon Carbide. Nanomaterials 2018, 8, 558.

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