Next Article in Journal
Preparation and In-Vitro Assessment of Hierarchal Organized Antibacterial Breath Mask Based on Polyacrylonitrile/Silver (PAN/AgNPs) Nanofiber
Previous Article in Journal
Improved Performance of Perovskite Light-Emitting Diodes by Quantum Confinement Effect in Perovskite Nanocrystals
Article Menu
Issue 7 (July) cover image

Export Article

Open AccessArticle
Nanomaterials 2018, 8(7), 460;

Interface Passivation Effects on the Photovoltaic Performance of Quantum Dot Sensitized Inverse Opal TiO2 Solar Cells

Department of Engineering Science, The University of Electro Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, Japan
Department of Physics, King Mongkut’s Institute of Technology Ladkrabang, 1 Soi Chalongkrung 1, Ladkrabang, Bangkok 10520, Thailand
Beijing Engineering Research Centre of Sustainable Energy and Buildings, Beijing University of Civil Engineering and Architecture, Beijing 102616, China
Graduate school of Life Science and Systems Engineering, Kyushu Institute of Technology, 2-4 Hibikino, Wakamatsu-ku, Kitakyushu, Fukuoka 808-0196, Japan
Authors to whom correspondence should be addressed.
Received: 5 May 2018 / Revised: 19 June 2018 / Accepted: 23 June 2018 / Published: 25 June 2018
Full-Text   |   PDF [1816 KB, uploaded 25 June 2018]   |  


Quantum dot (QD)-sensitized solar cells (QDSSCs) are expected to achieve higher energy conversion efficiency than traditional single-junction silicon solar cells due to the unique properties of QDs. An inverse opal (IO)-TiO2 (IO-TiO2) electrode is useful for QDSSCs because of its three-dimensional (3D) periodic nanostructures and better electrolyte penetration compared to the normal nanoparticles (NPs)-TiO2 (NPs-TiO2) electrode. We find that the open-circuit voltages Voc of the QDSSCs with IO-TiO2 electrodes are higher than those of QDSSCs with NPs-TiO2 electrodes. One important strategy for enhancing photovoltaic conversion efficiency of QDSSCs with IO-TiO2 electrodes is surface passivation of photoanodes using wide-bandgap semiconducting materials. In this study, we have proposed surface passivation on IO-TiO2 with ZnS coating before QD deposition. The efficiency of QDSSCs with IO-TiO2 electrodes is largely improved (from 0.74% to 1.33%) because of the enhancements of Voc (from 0.65 V to 0.74 V) and fill factor (FF) (from 0.37 to 0.63). This result indicates that ZnS passivation can reduce the interfacial recombination at the IO-TiO2/QDs and IO-TiO2/electrolyte interfaces, for which two possible explanations can be considered. One is the decrease of recombination at IO-TiO2/electrolyte interfaces, and the other one is the reduction of the back-electron injection from the TiO2 electrode to QDs. All of the above results are effective for improving the photovoltaic properties of QDSSCs. View Full-Text
Keywords: quantum dot-sensitized solar cells (QDSSCs); inverse opal-TiO2; surface passivation quantum dot-sensitized solar cells (QDSSCs); inverse opal-TiO2; surface passivation

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).

Supplementary material


Share & Cite This Article

MDPI and ACS Style

Hori, K.; Zhang, Y.; Tusamalee, P.; Nakazawa, N.; Yoshihara, Y.; Wang, R.; Toyoda, T.; Hayase, S.; Shen, Q. Interface Passivation Effects on the Photovoltaic Performance of Quantum Dot Sensitized Inverse Opal TiO2 Solar Cells. Nanomaterials 2018, 8, 460.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics



[Return to top]
Nanomaterials EISSN 2079-4991 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top