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Open AccessArticle

CuGaS2 and CuGaS2–ZnS Porous Layers from Solution-Processed Nanocrystals

Catalonia Institute for Energy Research—IREC, Sant Adrià de Besòs, 08930 Barcelona, Spain
LENS-MIND, Departament d’Enginyeries i Electrònica i Institut de Nanociència i Nanotecnologia (In2UB), Universitat de Barcelona, 08028 Barcelona, Spain
Institute of Energy Technologies, Department of Chemical Engineering and Barcelona Research Center in Multiscale Science and Engineering. Universitat Politècnica de Catalunya, EEBE, Eduard Maristany 16, 08019 Barcelona, Spain
ICREA, 08010 Barcelona, Spain
Department of Chemistry, Wayne State University, Detroit, MI 48202, USA
Authors to whom correspondence should be addressed.
Nanomaterials 2018, 8(4), 220;
Received: 12 February 2018 / Revised: 26 March 2018 / Accepted: 4 April 2018 / Published: 5 April 2018
The manufacturing of semiconducting films using solution-based approaches is considered a low cost alternative to vacuum-based thin film deposition strategies. An additional advantage of solution processing methods is the possibility to control the layer nano/microstructure. Here, we detail the production of mesoporous CuGaS2 (CGS) and ZnS layers from spin-coating and subsequent cross-linking through chalcogen-chalcogen bonds of properly functionalized nanocrystals (NCs). We further produce NC-based porous CGS/ZnS bilayers and NC-based CGS–ZnS composite layers using the same strategy. Photoelectrochemical measurements are used to demonstrate the efficacy of porous layers, and particularly the CGS/ZnS bilayers, for improved current densities and photoresponses relative to denser films deposited from as-produced NCs. View Full-Text
Keywords: aerogel; xerogel; porous layer; CuGaS2/ZnS; photoresponse; nanomaterial aerogel; xerogel; porous layer; CuGaS2/ZnS; photoresponse; nanomaterial
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MDPI and ACS Style

Berestok, T.; Guardia, P.; Estradé, S.; Llorca, J.; Peiró, F.; Cabot, A.; Brock, S.L. CuGaS2 and CuGaS2–ZnS Porous Layers from Solution-Processed Nanocrystals. Nanomaterials 2018, 8, 220.

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