Nazir, G.; Khan, M.F.; Aftab, S.; Afzal, A.M.; Dastgeer, G.; Rehman, M.A.; Seo, Y.; Eom, J.
Gate Tunable Transport in Graphene/MoS2/(Cr/Au) Vertical Field-Effect Transistors. Nanomaterials 2018, 8, 14.
https://doi.org/10.3390/nano8010014
AMA Style
Nazir G, Khan MF, Aftab S, Afzal AM, Dastgeer G, Rehman MA, Seo Y, Eom J.
Gate Tunable Transport in Graphene/MoS2/(Cr/Au) Vertical Field-Effect Transistors. Nanomaterials. 2018; 8(1):14.
https://doi.org/10.3390/nano8010014
Chicago/Turabian Style
Nazir, Ghazanfar, Muhammad Farooq Khan, Sikandar Aftab, Amir Muhammad Afzal, Ghulam Dastgeer, Malik Abdul Rehman, Yongho Seo, and Jonghwa Eom.
2018. "Gate Tunable Transport in Graphene/MoS2/(Cr/Au) Vertical Field-Effect Transistors" Nanomaterials 8, no. 1: 14.
https://doi.org/10.3390/nano8010014
APA Style
Nazir, G., Khan, M. F., Aftab, S., Afzal, A. M., Dastgeer, G., Rehman, M. A., Seo, Y., & Eom, J.
(2018). Gate Tunable Transport in Graphene/MoS2/(Cr/Au) Vertical Field-Effect Transistors. Nanomaterials, 8(1), 14.
https://doi.org/10.3390/nano8010014