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Open AccessArticle

Overcoming the Intrinsic Difference between Hydrophilic CH3NH3PbI3 and Hydrophobic C60 Thin Films to Improve the Photovoltaic Performance

Department of Electro-Optical Engineering, National Taipei University of Technology, Taipei 10608, Taiwan
Materials and Chemical Research Laboratories, Industrial Technology Research Institute, Hsinchu 31040, Taiwan
Department of Optics and Photonics, National Central University, Taoyuan 32001, Taiwan
Author to whom correspondence should be addressed.
Academic Editor: Thomas Nann
Nanomaterials 2017, 7(7), 166;
Received: 31 May 2017 / Revised: 23 June 2017 / Accepted: 29 June 2017 / Published: 3 July 2017
Dimethylformamide/dimethyl sulfoxide solvent mixtures were used as the CH3NH3PbI3 (MAPbI3) precursor solvent in a one-step spin coating method to fabricate smooth and hydrophilic crystalline MAPbI3 thin films on top of hydrophobic carbon-60 (C60) thin film for highly efficient photovoltaics. The structural, optical, and excitonic characteristics of the resultant MAPbI3 thin films were analyzed using X-ray diffraction (XRD), atomic-force microscopy, absorbance spectroscopy, photoluminescence (PL) spectrometry, and nanosecond time-resolved PL. There was a trade-off between the crystallinity and surface roughness of the MAPbI3 thin films, which strongly influenced the device performance of MAPbI3-based photovoltaics. The high power conversion efficiency (PCE) of 17.55% was achieved by improving the wettability of MAPbI3 precursor solutions on top of the C60 thin films. In addition, it was predicted that the fill factor and PCE could be further improved by increasing the crystallinity of the MAPbI3 thin film while keeping it smooth. View Full-Text
Keywords: CH3NH3PbI3; wettability; C60; photovoltaics CH3NH3PbI3; wettability; C60; photovoltaics
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Chen, L.-C.; Lin, Y.-S.; Tseng, Z.-L.; Wu, C.; Kao, F.-S.; Chen, S.-H. Overcoming the Intrinsic Difference between Hydrophilic CH3NH3PbI3 and Hydrophobic C60 Thin Films to Improve the Photovoltaic Performance. Nanomaterials 2017, 7, 166.

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