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Effects of Annealing Temperature on Properties of Ti-Ga–Doped ZnO Films Deposited on Flexible Substrates

Department of Mechanical Engineering, National Kaohsiung University of Applied Sciences, Kaohsiung City 807, Taiwan
Author to whom correspondence should be addressed.
Academic Editors: Ming-Tsang Lee and Thomas Nann
Nanomaterials 2015, 5(4), 1831-1839;
Received: 8 October 2015 / Revised: 20 October 2015 / Accepted: 29 October 2015 / Published: 3 November 2015
PDF [2348 KB, uploaded 3 November 2015]


An investigation is performed into the optical, electrical, and microstructural properties of Ti-Ga–doped ZnO films deposited on polyimide (PI) flexible substrates and then annealed at temperatures of 300 °C, 400 °C, and 450 °C, respectively. The X-ray diffraction (XRD) analysis results show that all of the films have a strong (002) Ga doped ZnO (GZO) preferential orientation. As the annealing temperature is increased to 400 °C, the optical transmittance increases and the electrical resistivity decreases. However, as the temperature is further increased to 450 °C, the transmittance reduces and the resistivity increases due to a carbonization of the PI substrate. Finally, the crystallinity of the ZnO film improves with an increasing annealing temperature only up to 400 °C and is accompanied by a smaller crystallite size and a lower surface roughness. View Full-Text
Keywords: annealing temperature effect; Ti-Ga; flexible substrate; polyimide annealing temperature effect; Ti-Ga; flexible substrate; polyimide

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Chen, T.-H.; Chen, T.-Y. Effects of Annealing Temperature on Properties of Ti-Ga–Doped ZnO Films Deposited on Flexible Substrates. Nanomaterials 2015, 5, 1831-1839.

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