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Nanomaterials
Volume 16
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10.3390/nano16010067
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This is an early access version, the complete PDF, HTML, and XML versions will be available soon.
Article

Bi2Se3/n-Si Schottky Junctions for Near-Infrared Photodetectors

by
Matteo Salvato
1,*,
Riccardo Ciciotti
1,
Filippo Pierucci
1,
Mattia Scagliotti
2,
Matteo Rapisarda
2,
Antonio Vecchione
3,
Anita Guarino
3,
Michele Crivellari
4 and
Paola Castrucci
1
1
Dipartimento di Fisica and INFN, Università degli Studi di Roma “Tor Vergata”, via della Ricerca Scientifica 1, 00133 Roma, Italy
2
Institute of Microelectronics and Microsystems, National Research Council (CNR-IMM), 00133 Roma, Italy
3
CNR-SPIN, UOS Salerno, via Giovanni Paolo II 132, 84084 Fisciano, Italy
4
Center for Sensors and Devices, Fondazione Bruno Kessler, 38123 Trento, Italy
*
Author to whom correspondence should be addressed.
Nanomaterials 2026, 16(1), 67; https://doi.org/10.3390/nano16010067 (registering DOI)
Submission received: 11 December 2025 / Revised: 29 December 2025 / Accepted: 31 December 2025 / Published: 2 January 2026
(This article belongs to the Special Issue Two-Dimensional Nanomaterials for High-Performance Transistors and Photodetectors)
Versions Notes

Abstract

Bi2Se3 thin films with different thicknesses are deposited on prepatterned n-Si substrates by the vapor–solid deposition method, demonstrating photodetector performances in the visible and near-infrared range up to the telecommunication wavelength 1550 nm and showing response times as low as 126 ns. The current voltage characteristics measured in the temperature range 77–300 K indicate the formation of Schottky junctions at the interface between the two materials. The nature of the junctions is discussed considering the effect of disorder at the interface induced by the Bi2Se3 film granularity. The temperature dependence of the ideality factors and the Schottky barrier heights is consistent with a thermionic field effect mechanism governing the electron motion through the interface, which is responsible for the fast response of the photodetectors.
Keywords: topological insulators; Schottky junctions; thermionic field effect topological insulators; Schottky junctions; thermionic field effect

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MDPI and ACS Style

Salvato, M.; Ciciotti, R.; Pierucci, F.; Scagliotti, M.; Rapisarda, M.; Vecchione, A.; Guarino, A.; Crivellari, M.; Castrucci, P. Bi2Se3/n-Si Schottky Junctions for Near-Infrared Photodetectors. Nanomaterials 2026, 16, 67. https://doi.org/10.3390/nano16010067

AMA Style

Salvato M, Ciciotti R, Pierucci F, Scagliotti M, Rapisarda M, Vecchione A, Guarino A, Crivellari M, Castrucci P. Bi2Se3/n-Si Schottky Junctions for Near-Infrared Photodetectors. Nanomaterials. 2026; 16(1):67. https://doi.org/10.3390/nano16010067

Chicago/Turabian Style

Salvato, Matteo, Riccardo Ciciotti, Filippo Pierucci, Mattia Scagliotti, Matteo Rapisarda, Antonio Vecchione, Anita Guarino, Michele Crivellari, and Paola Castrucci. 2026. "Bi2Se3/n-Si Schottky Junctions for Near-Infrared Photodetectors" Nanomaterials 16, no. 1: 67. https://doi.org/10.3390/nano16010067

APA Style

Salvato, M., Ciciotti, R., Pierucci, F., Scagliotti, M., Rapisarda, M., Vecchione, A., Guarino, A., Crivellari, M., & Castrucci, P. (2026). Bi2Se3/n-Si Schottky Junctions for Near-Infrared Photodetectors. Nanomaterials, 16(1), 67. https://doi.org/10.3390/nano16010067

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