Wang, Y.-C.; Chen, K.-H.; Kao, M.-C.; Chen, H.-C.; Cheng, C.-M.; Huang, H.-X.; Huang, K.-C.
Bipolar Switching Properties and Reaction Decay Effect of BST Ferroelectric Thin Films for Applications in Resistance Random Access Memory Devices. Nanomaterials 2025, 15, 602.
https://doi.org/10.3390/nano15080602
AMA Style
Wang Y-C, Chen K-H, Kao M-C, Chen H-C, Cheng C-M, Huang H-X, Huang K-C.
Bipolar Switching Properties and Reaction Decay Effect of BST Ferroelectric Thin Films for Applications in Resistance Random Access Memory Devices. Nanomaterials. 2025; 15(8):602.
https://doi.org/10.3390/nano15080602
Chicago/Turabian Style
Wang, Yao-Chin, Kai-Huang Chen, Ming-Cheng Kao, Hsin-Chin Chen, Chien-Min Cheng, Hong-Xiang Huang, and Kai-Chi Huang.
2025. "Bipolar Switching Properties and Reaction Decay Effect of BST Ferroelectric Thin Films for Applications in Resistance Random Access Memory Devices" Nanomaterials 15, no. 8: 602.
https://doi.org/10.3390/nano15080602
APA Style
Wang, Y.-C., Chen, K.-H., Kao, M.-C., Chen, H.-C., Cheng, C.-M., Huang, H.-X., & Huang, K.-C.
(2025). Bipolar Switching Properties and Reaction Decay Effect of BST Ferroelectric Thin Films for Applications in Resistance Random Access Memory Devices. Nanomaterials, 15(8), 602.
https://doi.org/10.3390/nano15080602
