Li, P.; Kong, D.; Yang, J.; Cui, S.; Chen, Q.; Liu, Y.; He, Z.; Liu, F.; Xu, Y.; Wei, H.;
et al. Engineering Nonvolatile Polarization in 2D α-In2Se3/α-Ga2Se3 Ferroelectric Junctions. Nanomaterials 2025, 15, 163.
https://doi.org/10.3390/nano15030163
AMA Style
Li P, Kong D, Yang J, Cui S, Chen Q, Liu Y, He Z, Liu F, Xu Y, Wei H,
et al. Engineering Nonvolatile Polarization in 2D α-In2Se3/α-Ga2Se3 Ferroelectric Junctions. Nanomaterials. 2025; 15(3):163.
https://doi.org/10.3390/nano15030163
Chicago/Turabian Style
Li, Peipei, Delin Kong, Jin Yang, Shuyu Cui, Qi Chen, Yue Liu, Ziheng He, Feng Liu, Yingying Xu, Huiyun Wei,
and et al. 2025. "Engineering Nonvolatile Polarization in 2D α-In2Se3/α-Ga2Se3 Ferroelectric Junctions" Nanomaterials 15, no. 3: 163.
https://doi.org/10.3390/nano15030163
APA Style
Li, P., Kong, D., Yang, J., Cui, S., Chen, Q., Liu, Y., He, Z., Liu, F., Xu, Y., Wei, H., Zheng, X., & Peng, M.
(2025). Engineering Nonvolatile Polarization in 2D α-In2Se3/α-Ga2Se3 Ferroelectric Junctions. Nanomaterials, 15(3), 163.
https://doi.org/10.3390/nano15030163
