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Journal: Nanomaterials, 2025
Volume: 15
Number: 946
946
Article: Novel 4H-SiC Double-Trench MOSFETs with Integrated Schottky Barrier and MOS-Channel Diodes for Enhanced Breakdown Voltage and Switching Characteristics
Authors: by Peiran Wang, Chenglong Li, Chenkai Deng, Qinhan Yang, Shoucheng Xu, Xinyi Tang, Ziyang Wang, Wenchuan Tao, Nick Tao, Qing Wang and Hongyu Yu
Link: https://www.mdpi.com/2079-4991/15/12/946

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