Article Versions Notes

Chen Y, Jiang D, Zeng C, Xu C, Sun H, Hou Y, Zhou M. Controlling GaN-Based Laser Diode Performance by Variation of the Al Content of an Inserted AlGaN Electron Blocking Layer. Nanomaterials. 2024; 14(5):449. https://doi.org/10.3390/nano14050449

Chen, Yuhui, Daiyi Jiang, Chunmiao Zeng, Chuanxiong Xu, Haoran Sun, Yufei Hou, and Mei Zhou. 2024. "Controlling GaN-Based Laser Diode Performance by Variation of the Al Content of an Inserted AlGaN Electron Blocking Layer" Nanomaterials 14, no. 5: 449. https://doi.org/10.3390/nano14050449

Chen, Y., Jiang, D., Zeng, C., Xu, C., Sun, H., Hou, Y., & Zhou, M. (2024). Controlling GaN-Based Laser Diode Performance by Variation of the Al Content of an Inserted AlGaN Electron Blocking Layer. Nanomaterials, 14(5), 449. https://doi.org/10.3390/nano14050449