Chen, Y.; Jiang, D.; Zeng, C.; Xu, C.; Sun, H.; Hou, Y.; Zhou, M.
Controlling GaN-Based Laser Diode Performance by Variation of the Al Content of an Inserted AlGaN Electron Blocking Layer. Nanomaterials 2024, 14, 449.
https://doi.org/10.3390/nano14050449
AMA Style
Chen Y, Jiang D, Zeng C, Xu C, Sun H, Hou Y, Zhou M.
Controlling GaN-Based Laser Diode Performance by Variation of the Al Content of an Inserted AlGaN Electron Blocking Layer. Nanomaterials. 2024; 14(5):449.
https://doi.org/10.3390/nano14050449
Chicago/Turabian Style
Chen, Yuhui, Daiyi Jiang, Chunmiao Zeng, Chuanxiong Xu, Haoran Sun, Yufei Hou, and Mei Zhou.
2024. "Controlling GaN-Based Laser Diode Performance by Variation of the Al Content of an Inserted AlGaN Electron Blocking Layer" Nanomaterials 14, no. 5: 449.
https://doi.org/10.3390/nano14050449
APA Style
Chen, Y., Jiang, D., Zeng, C., Xu, C., Sun, H., Hou, Y., & Zhou, M.
(2024). Controlling GaN-Based Laser Diode Performance by Variation of the Al Content of an Inserted AlGaN Electron Blocking Layer. Nanomaterials, 14(5), 449.
https://doi.org/10.3390/nano14050449
