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Journal: Nanomaterials, 2024
Volume: 14
Number: 209
209
Article: Necking Reduction at Low Temperature in Aspect Ratio Etching of SiO₂ at CF₄/H₂/Ar Plasma
Authors: by Hee-Tae Kwon, In-Young Bang, Jae-Hyeon Kim, Hyeon-Jo Kim, Seong-Yong Lim, Seo-Yeon Kim, Seong-Hee Cho, Ji-Hwan Kim, Woo-Jae Kim, Gi-Won Shin and Gi-Chung Kwon
Link: https://www.mdpi.com/2079-4991/14/2/209

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