Article Versions Notes

Kwon H-T, Bang I-Y, Kim J-H, Kim H-J, Lim S-Y, Kim S-Y, Cho S-H, Kim J-H, Kim W-J, Shin G-W, et al. Necking Reduction at Low Temperature in Aspect Ratio Etching of SiO₂ at CF₄/H₂/Ar Plasma. Nanomaterials. 2024; 14(2):209. https://doi.org/10.3390/nano14020209

Kwon, Hee-Tae, In-Young Bang, Jae-Hyeon Kim, Hyeon-Jo Kim, Seong-Yong Lim, Seo-Yeon Kim, Seong-Hee Cho, Ji-Hwan Kim, Woo-Jae Kim, Gi-Won Shin, and et al. 2024. "Necking Reduction at Low Temperature in Aspect Ratio Etching of SiO₂ at CF₄/H₂/Ar Plasma" Nanomaterials 14, no. 2: 209. https://doi.org/10.3390/nano14020209

Kwon, H.-T., Bang, I.-Y., Kim, J.-H., Kim, H.-J., Lim, S.-Y., Kim, S.-Y., Cho, S.-H., Kim, J.-H., Kim, W.-J., Shin, G.-W., & Kwon, G.-C. (2024). Necking Reduction at Low Temperature in Aspect Ratio Etching of SiO₂ at CF₄/H₂/Ar Plasma. Nanomaterials, 14(2), 209. https://doi.org/10.3390/nano14020209