Liu, S.; Shang, X.; Liu, X.; Wang, X.; Liu, F.; Zhang, J.
Excellent Hole Mobility and Out–of–Plane Piezoelectricity in X–Penta–Graphene (X = Si or Ge) with Poisson’s Ratio Inversion. Nanomaterials 2024, 14, 1358.
https://doi.org/10.3390/nano14161358
AMA Style
Liu S, Shang X, Liu X, Wang X, Liu F, Zhang J.
Excellent Hole Mobility and Out–of–Plane Piezoelectricity in X–Penta–Graphene (X = Si or Ge) with Poisson’s Ratio Inversion. Nanomaterials. 2024; 14(16):1358.
https://doi.org/10.3390/nano14161358
Chicago/Turabian Style
Liu, Sitong, Xiao Shang, Xizhe Liu, Xiaochun Wang, Fuchun Liu, and Jun Zhang.
2024. "Excellent Hole Mobility and Out–of–Plane Piezoelectricity in X–Penta–Graphene (X = Si or Ge) with Poisson’s Ratio Inversion" Nanomaterials 14, no. 16: 1358.
https://doi.org/10.3390/nano14161358
APA Style
Liu, S., Shang, X., Liu, X., Wang, X., Liu, F., & Zhang, J.
(2024). Excellent Hole Mobility and Out–of–Plane Piezoelectricity in X–Penta–Graphene (X = Si or Ge) with Poisson’s Ratio Inversion. Nanomaterials, 14(16), 1358.
https://doi.org/10.3390/nano14161358