Kim, S.J.; Hwang, S.; Kwon, J.-D.; Yoon, J.; Park, J.M.; Lee, Y.; Kim, Y.; Kang, C.G.
Gamma-Irradiation-Induced Electrical Characteristic Variations in MoS2 Field-Effect Transistors with Buried Local Back-Gate Structure. Nanomaterials 2024, 14, 1324.
https://doi.org/10.3390/nano14161324
AMA Style
Kim SJ, Hwang S, Kwon J-D, Yoon J, Park JM, Lee Y, Kim Y, Kang CG.
Gamma-Irradiation-Induced Electrical Characteristic Variations in MoS2 Field-Effect Transistors with Buried Local Back-Gate Structure. Nanomaterials. 2024; 14(16):1324.
https://doi.org/10.3390/nano14161324
Chicago/Turabian Style
Kim, Su Jin, Seungkwon Hwang, Jung-Dae Kwon, Jongwon Yoon, Jeong Min Park, Yongsu Lee, Yonghun Kim, and Chang Goo Kang.
2024. "Gamma-Irradiation-Induced Electrical Characteristic Variations in MoS2 Field-Effect Transistors with Buried Local Back-Gate Structure" Nanomaterials 14, no. 16: 1324.
https://doi.org/10.3390/nano14161324
APA Style
Kim, S. J., Hwang, S., Kwon, J.-D., Yoon, J., Park, J. M., Lee, Y., Kim, Y., & Kang, C. G.
(2024). Gamma-Irradiation-Induced Electrical Characteristic Variations in MoS2 Field-Effect Transistors with Buried Local Back-Gate Structure. Nanomaterials, 14(16), 1324.
https://doi.org/10.3390/nano14161324
