Gunder, C.; Zamani-Alavijeh, M.; Wangila, E.; Maia de Oliveira, F.; Sheibani, A.; Kryvyi, S.; Attwood, P.C.; Mazur, Y.I.; Yu, S.-Q.; Salamo, G.J.
Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy. Nanomaterials 2024, 14, 909.
https://doi.org/10.3390/nano14110909
AMA Style
Gunder C, Zamani-Alavijeh M, Wangila E, Maia de Oliveira F, Sheibani A, Kryvyi S, Attwood PC, Mazur YI, Yu S-Q, Salamo GJ.
Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy. Nanomaterials. 2024; 14(11):909.
https://doi.org/10.3390/nano14110909
Chicago/Turabian Style
Gunder, Calbi, Mohammad Zamani-Alavijeh, Emmanuel Wangila, Fernando Maia de Oliveira, Aida Sheibani, Serhii Kryvyi, Paul C. Attwood, Yuriy I. Mazur, Shui-Qing Yu, and Gregory J. Salamo.
2024. "Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy" Nanomaterials 14, no. 11: 909.
https://doi.org/10.3390/nano14110909
APA Style
Gunder, C., Zamani-Alavijeh, M., Wangila, E., Maia de Oliveira, F., Sheibani, A., Kryvyi, S., Attwood, P. C., Mazur, Y. I., Yu, S.-Q., & Salamo, G. J.
(2024). Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy. Nanomaterials, 14(11), 909.
https://doi.org/10.3390/nano14110909