Order Article Reprints

Chang S-J, Kim D-S, Kim T-W, Bae Y, Jung H-W, Choi I-G, Noh Y-S, Lee S-H, Kim S-I, Ahn H-K, et al. Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator. Nanomaterials. 2023; 13(5):898. https://doi.org/10.3390/nano13050898

Chang, Sung-Jae, Dong-Seok Kim, Tae-Woo Kim, Youngho Bae, Hyun-Wook Jung, Il-Gyu Choi, Youn-Sub Noh, Sang-Heung Lee, Seong-Il Kim, Ho-Kyun Ahn, and et al. 2023. "Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator" Nanomaterials 13, no. 5: 898. https://doi.org/10.3390/nano13050898

Chang, S.-J., Kim, D.-S., Kim, T.-W., Bae, Y., Jung, H.-W., Choi, I.-G., Noh, Y.-S., Lee, S.-H., Kim, S.-I., Ahn, H.-K., Kang, D.-M., & Lim, J.-W. (2023). Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator. Nanomaterials, 13(5), 898. https://doi.org/10.3390/nano13050898