Saha, P.; Sankar Dhar, R.; Nanda, S.; Kumar, K.; Alathbah, M.
The Optimization and Analysis of a Triple-Fin Heterostructure-on-Insulator Fin Field-Effect Transistor with a Stacked High-k Configuration and 10 nm Channel Length. Nanomaterials 2023, 13, 3008.
https://doi.org/10.3390/nano13233008
AMA Style
Saha P, Sankar Dhar R, Nanda S, Kumar K, Alathbah M.
The Optimization and Analysis of a Triple-Fin Heterostructure-on-Insulator Fin Field-Effect Transistor with a Stacked High-k Configuration and 10 nm Channel Length. Nanomaterials. 2023; 13(23):3008.
https://doi.org/10.3390/nano13233008
Chicago/Turabian Style
Saha, Priyanka, Rudra Sankar Dhar, Swagat Nanda, Kuleen Kumar, and Moath Alathbah.
2023. "The Optimization and Analysis of a Triple-Fin Heterostructure-on-Insulator Fin Field-Effect Transistor with a Stacked High-k Configuration and 10 nm Channel Length" Nanomaterials 13, no. 23: 3008.
https://doi.org/10.3390/nano13233008
APA Style
Saha, P., Sankar Dhar, R., Nanda, S., Kumar, K., & Alathbah, M.
(2023). The Optimization and Analysis of a Triple-Fin Heterostructure-on-Insulator Fin Field-Effect Transistor with a Stacked High-k Configuration and 10 nm Channel Length. Nanomaterials, 13(23), 3008.
https://doi.org/10.3390/nano13233008
