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Journal: Nanomaterials, 2022
Volume: 12
Number: 4412

Article: Resistive Switching Memory Cell Property Improvement by Al/SrZrTiO3/Al/SrZrTiO3/ITO with Embedded Al Layer
Authors: by Ke-Jing Lee, Wei-Shao Lin, Li-Wen Wang, Hsin-Ni Lin and Yeong-Her Wang
Link: https://www.mdpi.com/2079-4991/12/24/4412

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