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A Simple Doping Process Achieved by Modifying the Passivation Layer for Self-Aligned Top-Gate In-Ga-Zn-O Thin-Film Transistors at 200 °C
 
 

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Journal: Nanomaterials, 2022
Volume: 12
Number: 4358

Article: Critical Effect of Oxygen Pressure in Pulsed Laser Deposition for Room Temperature and High Performance Amorphous In-Ga-Zn-O Thin Film Transistors
Authors: by Yue Zhou, Dao Wang, Yushan Li, Lixin Jing, Shuangjie Li, Xiaodan Chen, Beijing Zhang, Wentao Shuai, Ruiqiang Tao, Xubing Lu and Junming Liu
Link: https://www.mdpi.com/2079-4991/12/24/4358

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