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Journal: Nanomaterials, 2022
Volume: 12
Number: 4352
Article:
Steep-Slope and Hysteresis-Free MoS2 Negative-Capacitance Transistors Using Single HfZrAlO Layer as Gate Dielectric
Authors:
by
Xinge Tao, Lu Liu and Jingping Xu
Link:
https://www.mdpi.com/2079-4991/12/24/4352
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