Koveshnikov, S.; Kononenko, O.; Soltanovich, O.; Kapitanova, O.; Knyazev, M.; Volkov, V.; Yakimov, E.
Multiple Resistive Switching Mechanisms in Graphene Oxide-Based Resistive Memory Devices. Nanomaterials 2022, 12, 3626.
https://doi.org/10.3390/nano12203626
AMA Style
Koveshnikov S, Kononenko O, Soltanovich O, Kapitanova O, Knyazev M, Volkov V, Yakimov E.
Multiple Resistive Switching Mechanisms in Graphene Oxide-Based Resistive Memory Devices. Nanomaterials. 2022; 12(20):3626.
https://doi.org/10.3390/nano12203626
Chicago/Turabian Style
Koveshnikov, Sergei, Oleg Kononenko, Oleg Soltanovich, Olesya Kapitanova, Maxim Knyazev, Vladimir Volkov, and Eugene Yakimov.
2022. "Multiple Resistive Switching Mechanisms in Graphene Oxide-Based Resistive Memory Devices" Nanomaterials 12, no. 20: 3626.
https://doi.org/10.3390/nano12203626
APA Style
Koveshnikov, S., Kononenko, O., Soltanovich, O., Kapitanova, O., Knyazev, M., Volkov, V., & Yakimov, E.
(2022). Multiple Resistive Switching Mechanisms in Graphene Oxide-Based Resistive Memory Devices. Nanomaterials, 12(20), 3626.
https://doi.org/10.3390/nano12203626