Dragoman, M.; Dinescu, A.; Dragoman, D.; Palade, C.; Teodorescu, V.Åž.; Ciurea, M.L.
Graphene/Ferroelectric (Ge-Doped HfO2) Adaptable Transistors Acting as Reconfigurable Logic Gates. Nanomaterials 2022, 12, 279.
https://doi.org/10.3390/nano12020279
AMA Style
Dragoman M, Dinescu A, Dragoman D, Palade C, Teodorescu VÅž, Ciurea ML.
Graphene/Ferroelectric (Ge-Doped HfO2) Adaptable Transistors Acting as Reconfigurable Logic Gates. Nanomaterials. 2022; 12(2):279.
https://doi.org/10.3390/nano12020279
Chicago/Turabian Style
Dragoman, Mircea, Adrian Dinescu, Daniela Dragoman, Cătălin Palade, Valentin Şerban Teodorescu, and Magdalena Lidia Ciurea.
2022. "Graphene/Ferroelectric (Ge-Doped HfO2) Adaptable Transistors Acting as Reconfigurable Logic Gates" Nanomaterials 12, no. 2: 279.
https://doi.org/10.3390/nano12020279
APA Style
Dragoman, M., Dinescu, A., Dragoman, D., Palade, C., Teodorescu, V. Åž., & Ciurea, M. L.
(2022). Graphene/Ferroelectric (Ge-Doped HfO2) Adaptable Transistors Acting as Reconfigurable Logic Gates. Nanomaterials, 12(2), 279.
https://doi.org/10.3390/nano12020279