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Article

Graphene/Ferroelectric (Ge-Doped HfO2) Adaptable Transistors Acting as Reconfigurable Logic Gates

1
National Institute for Research and Development in Microtechnology (IMT), Str. Erou Iancu Nicolae 126A, 077190 Voluntari, Romania
2
Faculty of Physics, Univ. of Bucharest, P.O. Box MG-11, 077125 Magurele, Romania
3
Academy of Romanian Scientists, Str. Ilfov 3, 050094 Bucharest, Romania
4
National Institute of Materials Physics, Str. Atomistilor 405 A, 077125 Magurele, Romania
*
Author to whom correspondence should be addressed.
Academic Editor: Filippo Giubileo
Nanomaterials 2022, 12(2), 279; https://doi.org/10.3390/nano12020279
Received: 14 December 2021 / Revised: 7 January 2022 / Accepted: 15 January 2022 / Published: 17 January 2022
(This article belongs to the Special Issue Intelligent Nanomaterials and Nanosystems)
We present an array of 225 field-effect transistors (FETs), where each of them has a graphene monolayer channel grown on a 3-layer deposited stack of 22 nm control HfO2/5 nm Ge-HfO2 intermediate layer/8 nm tunnel HfO2/p-Si substrate. The intermediate layer is ferroelectric and acts as a floating gate. All transistors have two top gates, while the p-Si substrate is acting as a back gate. We show that these FETs are acting memtransistors, working as two-input reconfigurable logic gates with memory, the type of the logic gate depending only on the values of the applied gate voltages and the choice of a threshold current. View Full-Text
Keywords: graphene; ferroelectrics; logical gates; intelligent transistors graphene; ferroelectrics; logical gates; intelligent transistors
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MDPI and ACS Style

Dragoman, M.; Dinescu, A.; Dragoman, D.; Palade, C.; Teodorescu, V.Ş.; Ciurea, M.L. Graphene/Ferroelectric (Ge-Doped HfO2) Adaptable Transistors Acting as Reconfigurable Logic Gates. Nanomaterials 2022, 12, 279. https://doi.org/10.3390/nano12020279

AMA Style

Dragoman M, Dinescu A, Dragoman D, Palade C, Teodorescu VŞ, Ciurea ML. Graphene/Ferroelectric (Ge-Doped HfO2) Adaptable Transistors Acting as Reconfigurable Logic Gates. Nanomaterials. 2022; 12(2):279. https://doi.org/10.3390/nano12020279

Chicago/Turabian Style

Dragoman, Mircea, Adrian Dinescu, Daniela Dragoman, Cătălin Palade, Valentin Şerban Teodorescu, and Magdalena Lidia Ciurea. 2022. "Graphene/Ferroelectric (Ge-Doped HfO2) Adaptable Transistors Acting as Reconfigurable Logic Gates" Nanomaterials 12, no. 2: 279. https://doi.org/10.3390/nano12020279

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