Wang, C.; Li, Y.; Jin, Y.; Guo, G.; Song, Y.; Huang, H.; He, H.; Wang, A.
One-Step Synergistic Treatment Approach for High Performance Amorphous InGaZnO Thin-Film Transistors Fabricated at Room Temperature. Nanomaterials 2022, 12, 3481.
https://doi.org/10.3390/nano12193481
AMA Style
Wang C, Li Y, Jin Y, Guo G, Song Y, Huang H, He H, Wang A.
One-Step Synergistic Treatment Approach for High Performance Amorphous InGaZnO Thin-Film Transistors Fabricated at Room Temperature. Nanomaterials. 2022; 12(19):3481.
https://doi.org/10.3390/nano12193481
Chicago/Turabian Style
Wang, Chunlan, Yuqing Li, Yebo Jin, Gangying Guo, Yongle Song, Hao Huang, Han He, and Aolin Wang.
2022. "One-Step Synergistic Treatment Approach for High Performance Amorphous InGaZnO Thin-Film Transistors Fabricated at Room Temperature" Nanomaterials 12, no. 19: 3481.
https://doi.org/10.3390/nano12193481
APA Style
Wang, C., Li, Y., Jin, Y., Guo, G., Song, Y., Huang, H., He, H., & Wang, A.
(2022). One-Step Synergistic Treatment Approach for High Performance Amorphous InGaZnO Thin-Film Transistors Fabricated at Room Temperature. Nanomaterials, 12(19), 3481.
https://doi.org/10.3390/nano12193481