Gridchin, V.O.; Dvoretckaia, L.N.; Kotlyar, K.P.; Reznik, R.R.; Parfeneva, A.V.; Dragunova, A.S.; Kryzhanovskaya, N.V.; Dubrovskii, V.G.; Cirlin, G.E.
Selective Area Epitaxy of GaN Nanowires on Si Substrates Using Microsphere Lithography: Experiment and Theory. Nanomaterials 2022, 12, 2341.
https://doi.org/10.3390/nano12142341
AMA Style
Gridchin VO, Dvoretckaia LN, Kotlyar KP, Reznik RR, Parfeneva AV, Dragunova AS, Kryzhanovskaya NV, Dubrovskii VG, Cirlin GE.
Selective Area Epitaxy of GaN Nanowires on Si Substrates Using Microsphere Lithography: Experiment and Theory. Nanomaterials. 2022; 12(14):2341.
https://doi.org/10.3390/nano12142341
Chicago/Turabian Style
Gridchin, Vladislav O., Liliia N. Dvoretckaia, Konstantin P. Kotlyar, Rodion R. Reznik, Alesya V. Parfeneva, Anna S. Dragunova, Natalia V. Kryzhanovskaya, Vladimir G. Dubrovskii, and George E. Cirlin.
2022. "Selective Area Epitaxy of GaN Nanowires on Si Substrates Using Microsphere Lithography: Experiment and Theory" Nanomaterials 12, no. 14: 2341.
https://doi.org/10.3390/nano12142341
APA Style
Gridchin, V. O., Dvoretckaia, L. N., Kotlyar, K. P., Reznik, R. R., Parfeneva, A. V., Dragunova, A. S., Kryzhanovskaya, N. V., Dubrovskii, V. G., & Cirlin, G. E.
(2022). Selective Area Epitaxy of GaN Nanowires on Si Substrates Using Microsphere Lithography: Experiment and Theory. Nanomaterials, 12(14), 2341.
https://doi.org/10.3390/nano12142341
