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Journal: Nanomaterials, 2021
Volume: 11
Number: 646
646
Article: Optimization of Structure and Electrical Characteristics for Four-Layer Vertically-Stacked Horizontal Gate-All-Around Si Nanosheets Devices
Authors: by Qingzhu Zhang, Jie Gu, Renren Xu, Lei Cao, Junjie Li, Zhenhua Wu, Guilei Wang, Jiaxin Yao, Zhaohao Zhang, Jinjuan Xiang, Xiaobin He, Zhenzhen Kong, Hong Yang, Jiajia Tian, Gaobo Xu, Shujuan Mao, Henry H. Radamson, Huaxiang Yin and Jun Luo
Link: https://www.mdpi.com/2079-4991/11/3/646

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