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Article

Strain and Spin-Orbit Coupling Engineering in Twisted WS2/Graphene Heterobilayer

1
Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Saclay, 91120 Palaiseau, France
2
Department of Chemical and Materials Engineering, New Jersey Institute of Technology, 138 Warren Street, Newark, NJ 07103, USA
3
Department of Physics and Astronomy, University of Pennsylvania, 209S 33rd Street, Philadelphia, PA 19104, USA
4
Materials Science Institute of Madrid (ICMM), Spanish Scientific Research Council (CSIC), Cantoblanco, 28049 Madrid, Spain
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MATINEE, CSIC Research Associated Unit between the Institute of Materials Science of the Valencia University (ICMUV) and the ICMM, Cantoblanco, 28049 Madrid, Spain
6
Synchrotron-SOLEIL, Université Paris-Saclay, Saint-Aubin, BP48, 91192 Gif sur Yvette, France
*
Authors to whom correspondence should be addressed.
Academic Editors: Antonio Di Bartolomeo and Fabrizio Pirri
Nanomaterials 2021, 11(11), 2921; https://doi.org/10.3390/nano11112921
Received: 19 October 2021 / Accepted: 28 October 2021 / Published: 31 October 2021
(This article belongs to the Special Issue State-of-the-Art 2D and Carbon Nanomaterials in France)
The strain in hybrid van der Waals heterostructures, made of two distinct two-dimensional van der Waals materials, offers an interesting handle on their corresponding electronic band structure. Such strain can be engineered by changing the relative crystallographic orientation between the constitutive monolayers, notably, the angular misorientation, also known as the “twist angle”. By combining angle-resolved photoemission spectroscopy with density functional theory calculations, we investigate here the band structure of the WS2/graphene heterobilayer for various twist angles. Despite the relatively weak coupling between WS2 and graphene, we demonstrate that the resulting strain quantitatively affects many electronic features of the WS2 monolayers, including the spin-orbit coupling strength. In particular, we show that the WS2 spin-orbit splitting of the valence band maximum at K can be tuned from 430 to 460 meV. Our findings open perspectives in controlling the band dispersion of van der Waals materials. View Full-Text
Keywords: twisted heterobilayer; van der Waals materials; spin-orbit coupling; band structure twisted heterobilayer; van der Waals materials; spin-orbit coupling; band structure
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MDPI and ACS Style

Ernandes, C.; Khalil, L.; Henck, H.; Zhao, M.-Q.; Chaste, J.; Oehler, F.; Johnson, A.T.C.; Asensio, M.C.; Pierucci, D.; Pala, M.; Avila, J.; Ouerghi, A. Strain and Spin-Orbit Coupling Engineering in Twisted WS2/Graphene Heterobilayer. Nanomaterials 2021, 11, 2921. https://doi.org/10.3390/nano11112921

AMA Style

Ernandes C, Khalil L, Henck H, Zhao M-Q, Chaste J, Oehler F, Johnson ATC, Asensio MC, Pierucci D, Pala M, Avila J, Ouerghi A. Strain and Spin-Orbit Coupling Engineering in Twisted WS2/Graphene Heterobilayer. Nanomaterials. 2021; 11(11):2921. https://doi.org/10.3390/nano11112921

Chicago/Turabian Style

Ernandes, Cyrine, Lama Khalil, Hugo Henck, Meng-Qiang Zhao, Julien Chaste, Fabrice Oehler, Alan T.C. Johnson, Maria C. Asensio, Debora Pierucci, Marco Pala, José Avila, and Abdelkarim Ouerghi. 2021. "Strain and Spin-Orbit Coupling Engineering in Twisted WS2/Graphene Heterobilayer" Nanomaterials 11, no. 11: 2921. https://doi.org/10.3390/nano11112921

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