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Optoelectronic Properties of Monolayer Hexagonal Boron Nitride on Different Substrates Measured by Terahertz Time-Domain Spectroscopy

by Muhammad Bilal 1,2, Wen Xu 1,3,*, Chao Wang 1,2, Hua Wen 1,2, Xinnian Zhao 1,2, Dan Song 1,2 and Lan Ding 3
1
Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China
2
Key Laboratory of Materials Physics, Institute of Solid State Physics, University of Science and Technology of China, Hefei 230026, China
3
School of Physics and Astronomy and Yunnan Key Laboratory for Quantum Information, Yunnan University, Kunming 650091, China
*
Author to whom correspondence should be addressed.
Nanomaterials 2020, 10(4), 762; https://doi.org/10.3390/nano10040762
Received: 27 March 2020 / Revised: 9 April 2020 / Accepted: 11 April 2020 / Published: 16 April 2020
(This article belongs to the Section Nanocomposite Thin Films and 2D Materials)
Monolayer (ML) hexagonal boron nitride (hBN) is an important material in making, e.g., deep ultraviolet optoelectronic and power devices and van der Waals heterojunctions in combination with other two-dimensional (2D) electronic systems such as graphene and ML MoS 2 . In this work, we present a comparative study of the basic optoelectronic properties of low resistance ML hBN placed on different substrates such as SiO 2 /Si, quartz, PET, and sapphire. The measurement is carried out by using terahertz (THz) time-domain spectroscopy (TDS) in a temperature regime from 80 to 280 K. We find that the real and imaginary parts of the optical conductivity obtained experimentally for low resistance ML hBN on different substrates can fit well to the Drude–Smith formula. Thus, we are able to determine optically the key sample and material parameters (e.g., the electronic relaxation time or mobility, the carrier density, the electronic localization factor, etc.) of ML hBN. The effect of temperature on these parameters is also examined and analyzed. The results obtained from this study enable us to suggest the appropriate substrate for ML hBN based electronic and optoelectronic devices. This work is relevant to the application to a newly developed 2D electronic system as advanced electronic and optoelectronic materials. View Full-Text
Keywords: monolayer; hexagonal boron nitride; chemical vapor deposition; terahertz; time domain spectroscopy monolayer; hexagonal boron nitride; chemical vapor deposition; terahertz; time domain spectroscopy
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Bilal, M.; Xu, W.; Wang, C.; Wen, H.; Zhao, X.; Song, D.; Ding, L. Optoelectronic Properties of Monolayer Hexagonal Boron Nitride on Different Substrates Measured by Terahertz Time-Domain Spectroscopy. Nanomaterials 2020, 10, 762.

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