Next Article in Journal
Titanium-Doped P-Type WO3 Thin Films for Liquefied Petroleum Gas Detection
Previous Article in Journal
Ligand-Assisted Formation of Graphene/Quantum Dot Monolayers with Improved Morphological and Electrical Properties
Open AccessCommunication

Double Metal Oxide Electron Transport Layers for Colloidal Quantum Dot Light-Emitting Diodes

1
Department of Electrical and Computer Engineering, Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, Korea
2
Department of Electrical Engineering, Pusan National University, Busan 46241, Korea
3
Department of Energy Science, Center for Artificial Atoms, Sungkyunkwan University (SKKU), Suwon, Gyeonggi-do 16419, Korea
4
Department of Electronics Engineering, Sookmyung Women’s University, Seoul 04310, Korea
5
Realistic Media Research Center, Innovative Technology Research Division, Gumi Electronics & Information Technology Research Institute (GERI), Gumi, Gyeonsangbuk-do 39253, Korea
*
Author to whom correspondence should be addressed.
Nanomaterials 2020, 10(4), 726; https://doi.org/10.3390/nano10040726
Received: 7 March 2020 / Revised: 7 April 2020 / Accepted: 9 April 2020 / Published: 11 April 2020
(This article belongs to the Section Nanocomposite Thin Films and 2D Materials)
The performance of colloidal quantum dot light-emitting diodes (QD-LEDs) have been rapidly improved since metal oxide semiconductors were adopted for an electron transport layer (ETL). Among metal oxide semiconductors, zinc oxide (ZnO) has been the most generally employed for the ETL because of its excellent electron transport and injection properties. However, the ZnO ETL often yields charge imbalance in QD-LEDs, which results in undesirable device performance. Here, to address this issue, we introduce double metal oxide ETLs comprising ZnO and tin dioxide (SnO2) bilayer stacks. The employment of SnO2 for the second ETL significantly improves charge balance in the QD-LEDs by preventing spontaneous electron injection from the ZnO ETL and, as a result, we demonstrate 1.6 times higher luminescence efficiency in the QD-LEDs. This result suggests that the proposed double metal oxide ETLs can be a versatile platform for QD-based optoelectronic devices. View Full-Text
Keywords: quantum dot (QD); light emitting diode (LED); metal oxide; double electron transport layer (ETL); SnO2 nanoparticles quantum dot (QD); light emitting diode (LED); metal oxide; double electron transport layer (ETL); SnO2 nanoparticles
Show Figures

Graphical abstract

MDPI and ACS Style

Park, M.; Roh, J.; Lim, J.; Lee, H.; Lee, D. Double Metal Oxide Electron Transport Layers for Colloidal Quantum Dot Light-Emitting Diodes. Nanomaterials 2020, 10, 726.

Show more citation formats Show less citations formats
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

1
Search more from Scilit
 
Search
Back to TopTop