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Journal: Nanomaterials, 2020
Volume: 10
Number: 2175

Article: Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer
Authors: by Sung-Jae Chang, Dong-Seok Kim, Tae-Woo Kim, Jung-Hee Lee, Youngho Bae, Hyun-Wook Jung, Soo Cheol Kang, Haecheon Kim, Youn-Sub Noh, Sang-Heung Lee, Seong-Il Kim, Ho-Kyun Ahn and Jong-Won Lim
Link: https://www.mdpi.com/2079-4991/10/11/2175

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