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Computation 2018, 6(1), 19;

Effect of Carbon Concentration on the Sputtering of Carbon-Rich SiC Bombarded by Helium Ions

Beijing Key Laboratory of Passive Safety Technology for Nuclear Energy, School of Nuclear Science and Engineering, North China Electric Power University, Beijing 102206, China
The Second High School Attached to Beijing Normal University, Beijing 100088, China
Northwest Institute of Nuclear Technology, Xi’an 710024, China
Authors to whom correspondence should be addressed.
Received: 10 January 2018 / Revised: 3 February 2018 / Accepted: 12 February 2018 / Published: 14 February 2018
(This article belongs to the Section Computational Chemistry)
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Silicon carbide (SiC) is considered as an important material for nuclear engineering due to its excellent properties. Changing the carbon content in SiC can regulate and control its elastic and thermodynamic properties, but a simulation study of the effect of carbon content on the sputtering (caused by the helium ions) of SiC is still lacking. In this work, we used the Monte-Carlo and molecular dynamics simulation methods to study the effects of carbon concentration, incidence energy, incident angle, and target temperature on the sputtering yield of SiC. The results show that the incident ions’ energy and angle have a significant effect on sputtering yield of SiC when the carbon concentration in SiC is around 62 at %, while the target temperature has a little effect on the sputtering yield of SiC. Our work might provide theoretical support for the experimental research and engineering application of carbon fiber-reinforced SiC that be used as the plasma-facing material in tokamak fusion reactors. View Full-Text
Keywords: plasma-facing material; silicon carbide; sputtering; molecular dynamics simulation plasma-facing material; silicon carbide; sputtering; molecular dynamics simulation

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Liang, X.; Li, Y.; Zhao, Q.; Zhang, Z.; Ouyang, X. Effect of Carbon Concentration on the Sputtering of Carbon-Rich SiC Bombarded by Helium Ions. Computation 2018, 6, 19.

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