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Journal: Membranes, 2021
Volume: 11
Number: 727
Article:
Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al2O3/AlN Composite Gate Insulator
Authors:
by
Hsien-Chin Chiu, Chia-Hao Liu, Chong-Rong Huang, Chi-Chuan Chiu, Hsiang-Chun Wang, Hsuan-Ling Kao, Shinn-Yn Lin and Feng-Tso Chien
Link:
https://www.mdpi.com/2077-0375/11/10/727
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