Gu, Y.; Zhao, Y.; Ye, J.; Deng, Y.; Lu, H.
Single-Crystalline Si1−xGex (x = 0.5~1) Thin Films on Si (001) with Low Threading Dislocation Density Prepared by Low Temperature Molecular Beam Epitaxy. Appl. Sci. 2019, 9, 1772.
https://doi.org/10.3390/app9091772
AMA Style
Gu Y, Zhao Y, Ye J, Deng Y, Lu H.
Single-Crystalline Si1−xGex (x = 0.5~1) Thin Films on Si (001) with Low Threading Dislocation Density Prepared by Low Temperature Molecular Beam Epitaxy. Applied Sciences. 2019; 9(9):1772.
https://doi.org/10.3390/app9091772
Chicago/Turabian Style
Gu, Yu, Yunlei Zhao, Jiajia Ye, Yu Deng, and Hong Lu.
2019. "Single-Crystalline Si1−xGex (x = 0.5~1) Thin Films on Si (001) with Low Threading Dislocation Density Prepared by Low Temperature Molecular Beam Epitaxy" Applied Sciences 9, no. 9: 1772.
https://doi.org/10.3390/app9091772
APA Style
Gu, Y., Zhao, Y., Ye, J., Deng, Y., & Lu, H.
(2019). Single-Crystalline Si1−xGex (x = 0.5~1) Thin Films on Si (001) with Low Threading Dislocation Density Prepared by Low Temperature Molecular Beam Epitaxy. Applied Sciences, 9(9), 1772.
https://doi.org/10.3390/app9091772