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Journal: Appl. Sci., 2019
Volume: 9
Number: 4104

Article: Design and Investigation of a Dual Material Gate Arsenic Alloy Heterostructure Junctionless TFET with a Lightly Doped Source
Authors: by Haiwu Xie, Hongxia Liu, Shupeng Chen, Tao Han and Shulong Wang
Link: https://www.mdpi.com/2076-3417/9/19/4104

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