Next Article in Journal
Raising Power Loss Equalizing Degree of Coil Array by Convex Quadratic Optimization Commutation for Magnetic Levitation Planar Motors
Previous Article in Journal
Defense Against Adversarial Attacks in Deep Learning
Article

Enhanced Internal Quantum Efficiency of Bandgap-Engineered Green W-Shaped Quantum Well Light-Emitting Diode

1
Faculty of Engineering Sciences, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi 23460, Khyber Pakhtunkhwa, Pakistan
2
Department of Electronics & Communication Engineering, Hanyang University ERICA, Ansan, Gyeonggi-do 15588, Korea
3
Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan
4
Department of Mathematics, COMSATS University Islamabad, Wah Campus, Wah Cantonment 47040, Pakistan
*
Author to whom correspondence should be addressed.
Appl. Sci. 2019, 9(1), 77; https://doi.org/10.3390/app9010077
Received: 29 November 2018 / Revised: 18 December 2018 / Accepted: 20 December 2018 / Published: 26 December 2018
(This article belongs to the Section Nanotechnology and Applied Nanosciences)
To improve the internal quantum efficiency of green light-emitting diodes, we present the numerical design and analysis of bandgap-engineered W-shaped quantum well. The numerical results suggest significant improvement in the internal quantum efficiency of the proposed W-LED. The improvement is associated with significantly improved hole confinement due to the localization of indium in the active region, leading to improved radiative recombination rate. In addition, the proposed device shows reduced defect-assisted Shockley-Read-Hall (SRH) recombination rate as well as Auger recombination rate. Moreover, the efficiency rolloff in the proposed device is associated with increased built-in electromechanical field. View Full-Text
Keywords: quantum well; numerical simulation; internal quantum efficiency quantum well; numerical simulation; internal quantum efficiency
Show Figures

Graphical abstract

MDPI and ACS Style

Usman, M.; Mushtaq, U.; Zheng, D.-G.; Han, D.-P.; Rafiq, M.; Muhammad, N. Enhanced Internal Quantum Efficiency of Bandgap-Engineered Green W-Shaped Quantum Well Light-Emitting Diode. Appl. Sci. 2019, 9, 77. https://doi.org/10.3390/app9010077

AMA Style

Usman M, Mushtaq U, Zheng D-G, Han D-P, Rafiq M, Muhammad N. Enhanced Internal Quantum Efficiency of Bandgap-Engineered Green W-Shaped Quantum Well Light-Emitting Diode. Applied Sciences. 2019; 9(1):77. https://doi.org/10.3390/app9010077

Chicago/Turabian Style

Usman, Muhammad, Urooj Mushtaq, Dong-Guang Zheng, Dong-Pyo Han, Muhammad Rafiq, and Nazeer Muhammad. 2019. "Enhanced Internal Quantum Efficiency of Bandgap-Engineered Green W-Shaped Quantum Well Light-Emitting Diode" Applied Sciences 9, no. 1: 77. https://doi.org/10.3390/app9010077

Find Other Styles
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

1
Back to TopTop