Order Article Reprints

An N, Ma L, Wen G, Liang Z, Zhang H, Gao T, Fan C. Structure Design and Analysis of 2 μm InGaAsSb/AlGaAsSb Muti-Quantum Well Laser Diode with Carrier Blocking Layer. Applied Sciences. 2019; 9(1):162. https://doi.org/10.3390/app9010162

An, Ning, Lei Ma, Guanyu Wen, Zhipeng Liang, Haitao Zhang, Tianshu Gao, and Cunbo Fan. 2019. "Structure Design and Analysis of 2 μm InGaAsSb/AlGaAsSb Muti-Quantum Well Laser Diode with Carrier Blocking Layer" Applied Sciences 9, no. 1: 162. https://doi.org/10.3390/app9010162

An, N., Ma, L., Wen, G., Liang, Z., Zhang, H., Gao, T., & Fan, C. (2019). Structure Design and Analysis of 2 μm InGaAsSb/AlGaAsSb Muti-Quantum Well Laser Diode with Carrier Blocking Layer. Applied Sciences, 9(1), 162. https://doi.org/10.3390/app9010162