Kwak, H.-T.; Chang, S.-B.; Kim, H.-J.; Jang, K.-W.; Yoon, H.S.; Lee, S.-H.; Lim, J.-W.; Kim, H.-S.
Operational Improvement of AlGaN/GaN High Electron Mobility Transistor by an Inner Field-Plate Structure. Appl. Sci. 2018, 8, 974.
https://doi.org/10.3390/app8060974
AMA Style
Kwak H-T, Chang S-B, Kim H-J, Jang K-W, Yoon HS, Lee S-H, Lim J-W, Kim H-S.
Operational Improvement of AlGaN/GaN High Electron Mobility Transistor by an Inner Field-Plate Structure. Applied Sciences. 2018; 8(6):974.
https://doi.org/10.3390/app8060974
Chicago/Turabian Style
Kwak, Hyeon-Tak, Seung-Bo Chang, Hyun-Jung Kim, Kyu-Won Jang, Hyung Sup Yoon, Sang-Heung Lee, Jong-Won Lim, and Hyun-Seok Kim.
2018. "Operational Improvement of AlGaN/GaN High Electron Mobility Transistor by an Inner Field-Plate Structure" Applied Sciences 8, no. 6: 974.
https://doi.org/10.3390/app8060974
APA Style
Kwak, H.-T., Chang, S.-B., Kim, H.-J., Jang, K.-W., Yoon, H. S., Lee, S.-H., Lim, J.-W., & Kim, H.-S.
(2018). Operational Improvement of AlGaN/GaN High Electron Mobility Transistor by an Inner Field-Plate Structure. Applied Sciences, 8(6), 974.
https://doi.org/10.3390/app8060974