Order Article Reprints

Zhou S, Fang Z, Ning H, Cai W, Zhu Z, Wei J, Lu X, Yuan W, Yao R, Peng J. Bias Stability Enhancement in Thin-Film Transistor with a Solution-Processed ZrO₂ Dielectric as Gate Insulator. Applied Sciences. 2018; 8(5):806. https://doi.org/10.3390/app8050806

Zhou, Shangxiong, Zhiqiang Fang, Honglong Ning, Wei Cai, Zhennan Zhu, Jinglin Wei, Xubing Lu, Weijian Yuan, Rihui Yao, and Junbiao Peng. 2018. "Bias Stability Enhancement in Thin-Film Transistor with a Solution-Processed ZrO₂ Dielectric as Gate Insulator" Applied Sciences 8, no. 5: 806. https://doi.org/10.3390/app8050806

Zhou, S., Fang, Z., Ning, H., Cai, W., Zhu, Z., Wei, J., Lu, X., Yuan, W., Yao, R., & Peng, J. (2018). Bias Stability Enhancement in Thin-Film Transistor with a Solution-Processed ZrO₂ Dielectric as Gate Insulator. Applied Sciences, 8(5), 806. https://doi.org/10.3390/app8050806