Ouyang, L.-W.; Mayeda, J.C.; Sweeney, C.; Lie, D.Y.C.; Lopez, J.
A Broadband Millimeter-Wave 5G Low Noise Amplifier Design in 22 nm Fully Depleted Silicon-on-Insulator (FD-SOI) CMOS. Appl. Sci. 2024, 14, 3080.
https://doi.org/10.3390/app14073080
AMA Style
Ouyang L-W, Mayeda JC, Sweeney C, Lie DYC, Lopez J.
A Broadband Millimeter-Wave 5G Low Noise Amplifier Design in 22 nm Fully Depleted Silicon-on-Insulator (FD-SOI) CMOS. Applied Sciences. 2024; 14(7):3080.
https://doi.org/10.3390/app14073080
Chicago/Turabian Style
Ouyang, Liang-Wei, Jill C. Mayeda, Clint Sweeney, Donald Y. C. Lie, and Jerry Lopez.
2024. "A Broadband Millimeter-Wave 5G Low Noise Amplifier Design in 22 nm Fully Depleted Silicon-on-Insulator (FD-SOI) CMOS" Applied Sciences 14, no. 7: 3080.
https://doi.org/10.3390/app14073080
APA Style
Ouyang, L.-W., Mayeda, J. C., Sweeney, C., Lie, D. Y. C., & Lopez, J.
(2024). A Broadband Millimeter-Wave 5G Low Noise Amplifier Design in 22 nm Fully Depleted Silicon-on-Insulator (FD-SOI) CMOS. Applied Sciences, 14(7), 3080.
https://doi.org/10.3390/app14073080