Dahrouch, Z.; Malta, G.; d’Ambrosio, M.; Messina, A.A.; Musolino, M.; Sitta, A.; Calabretta, M.; Patanè, S.
Assessing the Stress Induced by Novel Packaging in GaN HEMT Devices via Raman Spectroscopy. Appl. Sci. 2024, 14, 4230.
https://doi.org/10.3390/app14104230
AMA Style
Dahrouch Z, Malta G, d’Ambrosio M, Messina AA, Musolino M, Sitta A, Calabretta M, Patanè S.
Assessing the Stress Induced by Novel Packaging in GaN HEMT Devices via Raman Spectroscopy. Applied Sciences. 2024; 14(10):4230.
https://doi.org/10.3390/app14104230
Chicago/Turabian Style
Dahrouch, Zainab, Giuliana Malta, Moreno d’Ambrosio, Angelo Alberto Messina, Mattia Musolino, Alessandro Sitta, Michele Calabretta, and Salvatore Patanè.
2024. "Assessing the Stress Induced by Novel Packaging in GaN HEMT Devices via Raman Spectroscopy" Applied Sciences 14, no. 10: 4230.
https://doi.org/10.3390/app14104230
APA Style
Dahrouch, Z., Malta, G., d’Ambrosio, M., Messina, A. A., Musolino, M., Sitta, A., Calabretta, M., & Patanè, S.
(2024). Assessing the Stress Induced by Novel Packaging in GaN HEMT Devices via Raman Spectroscopy. Applied Sciences, 14(10), 4230.
https://doi.org/10.3390/app14104230