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Journal: Appl. Sci., 2023
Volume: 13
Number: 7201
Article:
Investigating the Device Performance Variation of a Buried Locally Gated Al/Al2O3 Graphene Field-Effect Transistor Process
Authors:
by
Tzu-Jung Huang, Adheesh Ankolekar, Anibal Pacheco-Sanchez and Ivan Puchades
Link:
https://www.mdpi.com/2076-3417/13/12/7201
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