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Journal: Appl. Sci., 2022
Volume: 12
Number: 8119

Article: High-Temperature Annealing Effects on Atomically Thin Tungsten Diselenide Field-Effect Transistor
Authors: by Muhammad Atif Khan, Muhammad Qasim Mehmood and Yehia Massoud
Link: https://www.mdpi.com/2076-3417/12/16/8119

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