Next Article in Journal
Topology Optimisation in Structural Steel Design for Additive Manufacturing
Previous Article in Journal
Effects of Obesity on Adaptation Transfer from Treadmill to Over-Ground Walking
Previous Article in Special Issue
Manufacturing Optically Transparent Thick Zirconia Ceramics by Spark Plasma Sintering with the Use of Collector Pressing
Open AccessArticle

Low-Temperature and Low-Pressure Silicon Nitride Deposition by ECR-PECVD for Optical Waveguides

Department of Engineering Physics and Centre for Emerging Device Technologies, McMaster University, 1280 Main Street West, Hamilton, ON L8S 4L7, Canada
*
Author to whom correspondence should be addressed.
Academic Editor: Anna Lukowiak
Appl. Sci. 2021, 11(5), 2110; https://doi.org/10.3390/app11052110
Received: 5 February 2021 / Revised: 23 February 2021 / Accepted: 23 February 2021 / Published: 27 February 2021
(This article belongs to the Special Issue Photonic Glass-Ceramics: Fabrication, Properties and Applications)
We report on low-temperature and low-pressure deposition conditions of 140 °C and 1.5 mTorr, respectively, to achieve high-optical quality silicon nitride thin films. We deposit the silicon nitride films using an electron cyclotron resonance plasma-enhanced chemical vapour deposition (ECR-PECVD) chamber with Ar-diluted SiH4, and N2 gas. Variable-angle spectroscopic ellipsometry was used to determine the thickness and refractive index of the silicon nitride films, which ranged from 300 to 650 nm and 1.8 to 2.1 at 638 nm, respectively. We used Rutherford backscattering spectrometry to determine the chemical composition of the films, including oxygen contamination, and elastic recoil detection to characterize the removal of hydrogen after annealing. The as-deposited films are found to have variable relative silicon and nitrogen compositions with significant oxygen content and hydrogen incorporation of 10–20 and 17–21%, respectively. Atomic force microscopy measurements show a decrease in root mean square roughness after annealing for a variety of films. Prism coupling measurements show losses as low as 1.3, 0.3 and 1.5 ± 0.1 dB/cm at 638, 980 and 1550 nm, respectively, without the need for post-process annealing. Based on this study, we find that the as-deposited ECR-PECVD SiOxNy:Hz films have a suitable thickness, refractive index and optical loss for their use in visible and near-infrared integrated photonic devices. View Full-Text
Keywords: chemical vapour deposition silicon nitride; optical waveguides chemical vapour deposition silicon nitride; optical waveguides
Show Figures

Figure 1

MDPI and ACS Style

Bonneville, D.B.; Miller, J.W.; Smyth, C.; Mascher, P.; Bradley, J.D.B. Low-Temperature and Low-Pressure Silicon Nitride Deposition by ECR-PECVD for Optical Waveguides. Appl. Sci. 2021, 11, 2110. https://doi.org/10.3390/app11052110

AMA Style

Bonneville DB, Miller JW, Smyth C, Mascher P, Bradley JDB. Low-Temperature and Low-Pressure Silicon Nitride Deposition by ECR-PECVD for Optical Waveguides. Applied Sciences. 2021; 11(5):2110. https://doi.org/10.3390/app11052110

Chicago/Turabian Style

Bonneville, Dawson B.; Miller, Jeremy W.; Smyth, Caitlin; Mascher, Peter; Bradley, Jonathan D.B. 2021. "Low-Temperature and Low-Pressure Silicon Nitride Deposition by ECR-PECVD for Optical Waveguides" Appl. Sci. 11, no. 5: 2110. https://doi.org/10.3390/app11052110

Find Other Styles
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

1
Search more from Scilit
 
Search
Back to TopTop